Comparison of optical transitions in InGaN quantum well structures and microdisks
Identifieur interne : 010207 ( Main/Repository ); précédent : 010206; suivant : 010208Comparison of optical transitions in InGaN quantum well structures and microdisks
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Abstract
In0.22Ga0.78N/In0.06Ga0.94N multiple quantum well (MQW) microdisks 6.0 μm in diameter have been fabricated by photolithography and ion beam etching. Photoluminescence (PL) spectroscopy has been employed to study the optical transitions in these microdisks as well as in the original MQW structures prior to microdisk formation. With respect to the original MQWs, a blueshift in the PL peak position, enhancement of the PL intensity, and narrowing of the PL linewidth were observed at 10 K in the microdisks. These observations can be understood mainly in terms of a reduction of piezoelectric field strength due to partial strain relief in the microdisks. The magnitude the piezoelectric field reduction was estimated to be around 0.27 MV/cm, which is of the same order as the previously reported value of the piezoelectric field in similar MQW structures. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comparison of optical transitions in InGaN quantum well structures and microdisks</title><author><name sortKey="Dai, Lun" uniqKey="Dai L">Lun Dai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Zhang, Bei" uniqKey="Zhang B">Bei Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871</wicri:regionArea><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0173062</idno><date when="2001-05-01">2001-05-01</date><idno type="stanalyst">PASCAL 01-0173062 AIP</idno><idno type="RBID">Pascal:01-0173062</idno><idno type="wicri:Area/Main/Corpus">011578</idno><idno type="wicri:Area/Main/Repository">010207</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Line intensity</term><term>Line narrowing</term><term>Photoluminescence</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Spectral shift</term><term>microdisc lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>8105E</term><term>7321F</term><term>7867D</term><term>7855C</term><term>8107S</term><term>8535B</term><term>4255S</term><term>4255P</term><term>4260B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term><term>Photoluminescence</term><term>Contrainte interne</term><term>Déplacement spectral</term><term>Intensité raie</term><term>Rétrécissement raie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In<sub>0.22</sub>Ga<sub>0.78</sub>N/In<sub>0.06</sub>Ga<sub>0.94</sub>N multiple quantum well (MQW) microdisks 6.0 μm in diameter have been fabricated by photolithography and ion beam etching. Photoluminescence (PL) spectroscopy has been employed to study the optical transitions in these microdisks as well as in the original MQW structures prior to microdisk formation. With respect to the original MQWs, a blueshift in the PL peak position, enhancement of the PL intensity, and narrowing of the PL linewidth were observed at 10 K in the microdisks. These observations can be understood mainly in terms of a reduction of piezoelectric field strength due to partial strain relief in the microdisks. The magnitude the piezoelectric field reduction was estimated to be around 0.27 MV/cm, which is of the same order as the previously reported value of the piezoelectric field in similar MQW structures. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>89</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Comparison of optical transitions in InGaN quantum well structures and microdisks</s1></fA08><fA11 i1="01" i2="1"><s1>DAI (Lun)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHANG (Bei)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. 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